caa a22 4500 463234286 CHVBK 20180405153251.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-006-1130-4 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1130-4 Indium doped silver oxide thin films prepared by reactive electron beam evaporation technique: electrical properties [Elektronische Daten] [Aryasomayajula Subrahmanyam, Ullash Barik] The indium doped silver oxide thin films have been prepared at 275°C on soda lime glass and silicon substrates by reactive electron beam evaporation technique; the deposition rate has been varied (by varying the electron beam current) in the range 0.94-16.88nm/s keeping the oxygen flow rate constant. These films are polycrystalline. The electrical resistivity for these films decreases with increasing deposition rate. The AIO films prepared with a deposition rate of 5.7nm/s show near p-type conductivity. The work function has been measured on these films by contact potential method using Kelvin Probe. The surface morphology of the films has been evaluated using atomic force microscopy (AFM). The roles of indium doping and oxygen vacancies in the electrical properties of these films have been analyzed; the ionized impurity scattering is the dominant mechanism controlling the electrical conduction in these films. Springer Science+Business Media, LLC, 2007 Subrahmanyam Aryasomayajula Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, 600 036, Chennai, India aut Barik Ullash Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, 600 036, Chennai, India aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/15(2007-08-01), 6041-6045 0022-2461 42:15<6041 2007 42 10853 https://doi.org/10.1007/s10853-006-1130-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1130-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Subrahmanyam Aryasomayajula Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, 600 036, Chennai, India aut NATIONALLICENCE 700 1- Barik Ullash Semiconductor Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, 600 036, Chennai, India aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/15(2007-08-01), 6041-6045 0022-2461 42:15<6041 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer