caa a22 4500 463234731 CHVBK 20180405153253.0 cr unu---uuuuu 170326e20070801xx s 000 0 eng 10.1007/s10853-006-1187-0 doi (NATIONALLICENCE)springer-10.1007/s10853-006-1187-0 Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium [Elektronische Daten] [Z. Bi, R. Zhang, Z. Xie, X. Xiu, Y. Ye, B. Liu, S. Gu, B. Shen, Y. Shi, Y. Zheng] The initial stages of the cubic indium nitride film growth at 350°C were studied using low-pressure metal-organic chemical vapor deposition. The technique of the pre-deposition of indium was applied, that is, a layer of indium was first deposited on sapphire surface before the growth of InN. X-ray diffraction and X-ray photoelectron spectroscopy show that the pre-deposition of indium is able to promote the growth of InN films, and meanwhile, suppress the indium aggregation in the as-grown films. Atomic force microscopy images of InN films indicate that the pre-deposition of indium not only enhances the density of nucleate sites, but also facilitates the coalescence among the InN islands. The free energy calculations reveal that the pre-deposited indium atoms preferentially react with NH and N radicals after NH3 introduction, which leads to the formation of InN on the sapphire surface. The preferentially formed InN is then supposed to be responsible for the above phenomena. Springer Science+Business Media, LLC, 2007 Bi Z. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Zhang R. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Xie Z. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Xiu X. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Ye Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Liu B. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Gu S. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Shen B. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Shi Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Zheng Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/15(2007-08-01), 6377-6381 0022-2461 42:15<6377 2007 42 10853 https://doi.org/10.1007/s10853-006-1187-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10853-006-1187-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bi Z. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Zhang R. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Xie Z. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Xiu X. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Ye Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Liu B. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Gu S. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Shen B. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Shi Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 700 1- Zheng Y. Key Laboratory of advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, 210093, Nanjing, China aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers-Plenum Publishers; http://www.springer-ny.com 42/15(2007-08-01), 6377-6381 0022-2461 42:15<6377 2007 42 10853 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer