caa a22 4500 463240413 CHVBK 20180405153311.0 cr unu---uuuuu 170326e20070301xx s 000 0 eng 10.1007/s10947-007-0037-5 doi (NATIONALLICENCE)springer-10.1007/s10947-007-0037-5 Dultsev F. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk aut Silicon dioxide surface reconstruction stimulated by adsorption interaction [Elektronische Daten] [F. Dultsev] The MM2 molecular mechanics method is used for calculations on the adsorption complex formed on the surface of silicon dioxide due to adsorption of gases such as H2O, O2, NH3, HF. The results of modeling are in good agreement with experimental data; these results explain why film thickness decreases after adsorption and support our hypothesis about reconstruction of the surface layer stimulated by the adsorbed molecule. Springer Science+Business Media, Inc., 2007 modeling of an adsorption complex nationallicence surface reconstruction nationallicence silicon dioxide nationallicence adsorption heat nationallicence Journal of Structural Chemistry Springer US 48/2(2007-03-01), 231-235 0022-4766 48:2<231 2007 48 10947 https://doi.org/10.1007/s10947-007-0037-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10947-007-0037-5 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Dultsev F. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk aut NATIONALLICENCE 773 0- Journal of Structural Chemistry Springer US 48/2(2007-03-01), 231-235 0022-4766 48:2<231 2007 48 10947 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer