Annealing of radiation-induced defects in ion-implanted AIIBVI single crystals

Verfasser / Beitragende:
[A. Georgobiani, M. Kotlyarevskii, B. Dement'ev, V. Mikhalenko, N. Serdyuk, B. Urusov, N. Yakubovich]
Ort, Verlag, Jahr:
1989
Enthalten in:
Soviet Physics Journal, 32/3(1989-03-01), 198-203
Format:
Artikel (online)
ID: 465534198