Self-diffusion activation energy, recrystallization temperature, and annealing temperature of radiation-induced defects

Verfasser / Beitragende:
[V. Gerasimova, V. Gerasimov]
Ort, Verlag, Jahr:
1989
Enthalten in:
Soviet Atomic Energy, 66/5(1989-05-01), 376-377
Format:
Artikel (online)
ID: 465541070