caa a22 4500 467922950 CHVBK 20180406152922.0 cr unu---uuuuu 170328e20060101xx s 000 0 eng 10.1134/S1087659606010159 doi (NATIONALLICENCE)springer-10.1134/S1087659606010159 Lavrushina S. Voronezh State University, Universitetskaya pl. 1, 394893, Voronezh, Russia aut The role of nitrogen-containing compounds in the growth of oxide layers on GaAs and InP in the course of their thermal oxidation [Elektronische Daten] [S. Lavrushina] Thermal oxidation of GaAs and InP with the participation of nitrogen-containing compounds (such as NH3, N2O, NH4NO3, NH4VO3, and NH3 + V2O5) is investigated. It is found that the rates of growth of oxide layers on the surface of semiconductors increase significantly when the chemical activator undergoes transformations in the reaction zone with the formation of compounds that are active at the instant of formation. Pleiades Publishing, Inc., 2006 Glass Physics and Chemistry Nauka/Interperiodica 32/1(2006-01-01), 113-117 1087-6596 32:1<113 2006 32 10720 https://doi.org/10.1134/S1087659606010159 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S1087659606010159 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Lavrushina S. Voronezh State University, Universitetskaya pl. 1, 394893, Voronezh, Russia aut NATIONALLICENCE 773 0- Glass Physics and Chemistry Nauka/Interperiodica 32/1(2006-01-01), 113-117 1087-6596 32:1<113 2006 32 10720 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer