caa a22 4500 467925461 CHVBK 20180406152928.0 cr unu---uuuuu 170328e20060101xx s 000 0 eng 10.1134/S002016850601002X doi (NATIONALLICENCE)springer-10.1134/S002016850601002X Studies on the RF sputtered amorphous SiGe thin films [Elektronische Daten] [M. Serényi, T. Lohner, Z. Zolnai, P. Petrik, Á. Nemcsics, N. Khánh, P. Turmezei] In this study, rf sputtered hydrogenated amorphous silicon-germanium thin films deposited at room temperature have been investigated by spectroscopic ellipsometry and Rutherford backscattering. Technological parameters were determined for good layer quality of amorphous material. The layer thicknesses were first evaluated from the Rutherford backscattering and spectroscopic ellipsometry measurements, then measured directly by step-profiler, and compared to each other. The inherence of technological parameters and composition of the layers is discussed. Pleiades Publishing, Inc., 2006 Serényi M. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Lohner T. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Zolnai Z. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Petrik P. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Nemcsics Á. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Khánh N. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut Turmezei P. Budapest College of Engineering, Institute of Microelectronics and Technology, Tavaszmezöu, 17, H-1084, Budapest, Hungary aut Inorganic Materials Nauka/Interperiodica 42/1(2006-01-01), 3-6 0020-1685 42:1<3 2006 42 10789 https://doi.org/10.1134/S002016850601002X text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S002016850601002X text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Serényi M. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Lohner T. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Zolnai Z. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Petrik P. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Nemcsics Á. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Khánh N. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O.Box 49, H-1525, Budapest, Hungary aut NATIONALLICENCE 700 1- Turmezei P. Budapest College of Engineering, Institute of Microelectronics and Technology, Tavaszmezöu, 17, H-1084, Budapest, Hungary aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/1(2006-01-01), 3-6 0020-1685 42:1<3 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer