caa a22 4500 467925712 CHVBK 20180406152929.0 cr unu---uuuuu 170328e20060601xx s 000 0 eng 10.1134/S0020168506060094 doi (NATIONALLICENCE)springer-10.1134/S0020168506060094 Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films [Elektronische Daten] [A. Red'kin, A. Gruzintsev, Z. Makovei, V. Tatsii, E. Yakimov] Thick polycrystalline aluminum nitride films have been grown by chemical vapor deposition using metallic aluminum and ammonium chloride. The films have been characterized by scanning electron microscopy and photoluminescence spectroscopy. The results have been used to analyze correlations between the main process parameters. Pleiades Publishing, Inc., 2006 Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Tatsii V. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Yakimov E. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Inorganic Materials Nauka/Interperiodica 42/6(2006-06-01), 627-631 0020-1685 42:6<627 2006 42 10789 https://doi.org/10.1134/S0020168506060094 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506060094 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Tatsii V. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Yakimov E. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/6(2006-06-01), 627-631 0020-1685 42:6<627 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer