caa a22 4500 467925879 CHVBK 20180406152929.0 cr unu---uuuuu 170328e20060901xx s 000 0 eng 10.1134/S0020168506090032 doi (NATIONALLICENCE)springer-10.1134/S0020168506090032 Doping effect on the kinetics and mechanism of thermal oxidation of polycrystalline PbSe layers [Elektronische Daten] [N. Golubchenko, V. Moshnikov, D. Chesnokova] We have shown that the thermal oxidation (473-773 K) of polycrystalline lead selenide layers, undoped and doped with bismuth, cadmium, tin, and chlorine, has similar effects on their electrical properties, microstructure, and phase composition. The rate of oxygen diffusion and the formation kinetics of oxide phases depend on the nature and concentration of donors in the as-deposited layers; with decreasing doping level, oxygen diffuses more rapidly. In contrast to the diffusional mechanism of oxygen incorporation and gradual micro-structural changes in undoped and PbSe〈Bi〉 layers, iodine doping gives rise to drastic structural changes, including encapsulation of PbSe grains, which are accompanied by the formation of lead oxyselenites and almost instantaneous oxygen incorporation into the surface layer of the PbSe crystallites. Moreover, iodine is shown to catalyze the formation of dielectric oxide phases, reducing the temperature of this process and resulting in high photosensitivity compared to undoped PbSe layers. Pleiades Publishing, Inc., 2006 Golubchenko N. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut Moshnikov V. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut Chesnokova D. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut Inorganic Materials Nauka/Interperiodica 42/9(2006-09-01), 942-950 0020-1685 42:9<942 2006 42 10789 https://doi.org/10.1134/S0020168506090032 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506090032 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Golubchenko N. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Moshnikov V. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Chesnokova D. St. Petersburg State Electrotechnical University, ul. Professora Popova 5, 197376, St. Petersburg, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/9(2006-09-01), 942-950 0020-1685 42:9<942 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer