caa a22 4500 467925917 CHVBK 20180406152929.0 cr unu---uuuuu 170328e20060901xx s 000 0 eng 10.1134/S0020168506090019 doi (NATIONALLICENCE)springer-10.1134/S0020168506090019 Quench-induced defects in silicon doped with group III acceptor impurities: Generation and annealing [Elektronische Daten] [D. Brinkevich, V. Prosolovich] The formation and annealing of quench-induced defects in Czochralski silicon have been studied using IR spectroscopy and Hall effect measurements. The results demonstrate that the behavior of quench-induced defects in Si〈Al〉 differs markedly from that in silicon doped with other Group III acceptor impurities: B, Ga, and In. The elastic fields created in Si by the Ga and In dopants, as well as by the isovalent impurity Sn, increase the density and annealing temperature of quench-induced defects. The highest density of quench-induced defects in Si〈Al〉 was observed at 1100°C. Pleiades Publishing, Inc., 2006 Brinkevich D. Belarussian State University, pr. F. Skoriny 4, 22050, Minsk, Russia aut Prosolovich V. Belarussian State University, pr. F. Skoriny 4, 22050, Minsk, Russia aut Inorganic Materials Nauka/Interperiodica 42/9(2006-09-01), 933-936 0020-1685 42:9<933 2006 42 10789 https://doi.org/10.1134/S0020168506090019 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506090019 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Brinkevich D. Belarussian State University, pr. F. Skoriny 4, 22050, Minsk, Russia aut NATIONALLICENCE 700 1- Prosolovich V. Belarussian State University, pr. F. Skoriny 4, 22050, Minsk, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/9(2006-09-01), 933-936 0020-1685 42:9<933 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer