caa a22 4500 467926247 CHVBK 20180406152930.0 cr unu---uuuuu 170328e20060701xx s 000 0 eng 10.1134/S0020168506070119 doi (NATIONALLICENCE)springer-10.1134/S0020168506070119 Luminescence of ZnO nanorods grown by chemical vapor deposition on (111) Si substrates [Elektronische Daten] [A. Georgobiani, A. Gruzintsev, V. Kozlovskii, Z. Makovei, A. Red'kin, Ya. Skasyrskii] ZnO nanorods have been grown on (111) Si substrates by chemical vapor deposition in a horizontal reactor, with no catalyst. The nanorods grown far from the outlet end of the reactor are larger in size, have a higher structural perfection, and exhibit more efficient room-temperature edge luminescence in comparison with the nanorods grown at the outlet end. The low-temperature cathodoluminescence spectrum of the nanorods also depends on their position in the reactor during growth, which is interpreted in terms of the density of native defects. The nanorods exhibit room-temperature stimulated emission in the excitonic spectral region. Pleiades Publishing, Inc., 2006 Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut Kozlovskii V. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut Skasyrskii Ya Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42/7(2006-07-01), 750-755 0020-1685 42:7<750 2006 42 10789 https://doi.org/10.1134/S0020168506070119 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506070119 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Kozlovskii V. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chenogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Skasyrskii Ya Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/7(2006-07-01), 750-755 0020-1685 42:7<750 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer