caa a22 4500 467926271 CHVBK 20180406152930.0 cr unu---uuuuu 170328e20061201xx s 000 0 eng 10.1134/S0020168506120107 doi (NATIONALLICENCE)springer-10.1134/S0020168506120107 Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates [Elektronische Daten] [I. Rogozin, A. Georgobiani] The growth of thin GaN layers on single-crystal GaAs substrates during annealing in an atmosphere containing nitrogen atoms (radicals) has been analyzed in terms of a kinetic model. The nitridation of the surface of GaAs substrates has been studied by x-ray photoelectron spectroscopy. The results demonstrate that, at annealing temperatures below 500°C, both Ga-N and As-N bonds are formed on the substrate surface. Above 500°C, only Ga-N bonds are formed. The growth of GaN layers is shown to follow a quasi-epitaxial mechanism, in accordance with the proposed model. Pleiades Publishing, Inc., 2006 Rogozin I. Berdyansk State Pedagogical University, ul. Shmidta 4, 71118, Berdyansk, Ukraine aut Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42/12(2006-12-01), 1342-1347 0020-1685 42:12<1342 2006 42 10789 https://doi.org/10.1134/S0020168506120107 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506120107 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rogozin I. Berdyansk State Pedagogical University, ul. Shmidta 4, 71118, Berdyansk, Ukraine aut NATIONALLICENCE 700 1- Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/12(2006-12-01), 1342-1347 0020-1685 42:12<1342 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer