caa a22 4500 467926883 CHVBK 20180406152932.0 cr unu---uuuuu 170328e20061201xx s 000 0 eng 10.1134/S0020168506130048 doi (NATIONALLICENCE)springer-10.1134/S0020168506130048 Preparation of high-purity gallium from semiconductor fabrication waste [Elektronische Daten] [V. Fedorov, S. Kozlov, N. Potolokov, S. Nikolashin] This review summarizes the results of systematic studies aimed at developing processes for the preparation of high-purity gallium from semiconductor fabrication waste. A classification is proposed for Gacontaining waste materials according to the host and impurity compositions. We compare the efficiencies of different processes for the fine purification of crude gallium recovered from waste materials: wet-chemical processing, vacuum heat treatment, filtration, electrorefining, and directional solidification. Taking into account the behavior of impurities during the purification process and the nature of the waste materials, we have developed a multistep, environmentally safe process for preparing high-purity (99.9999%) gallium from unconventional raw materials. The product of this process compares well with gallium produced from conventional raw materials. We demonstrate that the use of semiconductor fabrication wastes as raw materials in large-scale-production of high-purity gallium and related microelectronic products is a commercially viable approach. Pleiades Publishing, Inc., 2006 Fedorov V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Kozlov S. Research Institute of Electronic Materials, ul. Gagarina 1, 248650, Kaluga, Russia aut Potolokov N. Research Institute of Electronic Materials, ul. Gagarina 1, 248650, Kaluga, Russia aut Nikolashin S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42(2006-12-01), S70-S89 0020-1685 42<S70 2006 42 10789 https://doi.org/10.1134/S0020168506130048 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506130048 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fedorov V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Kozlov S. Research Institute of Electronic Materials, ul. Gagarina 1, 248650, Kaluga, Russia aut NATIONALLICENCE 700 1- Potolokov N. Research Institute of Electronic Materials, ul. Gagarina 1, 248650, Kaluga, Russia aut NATIONALLICENCE 700 1- Nikolashin S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42(2006-12-01), S70-S89 0020-1685 42<S70 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer