caa a22 4500 467926956 CHVBK 20180406152932.0 cr unu---uuuuu 170328e20060401xx s 000 0 eng 10.1134/S0020168506040029 doi (NATIONALLICENCE)springer-10.1134/S0020168506040029 Scattering of charge carriers by tin impurities in polycrystalline Si-Ge alloys [Elektronische Daten] [E. Khutsishvili, N. Kekelidze, V. Jzhakeli, M. Pagava] Carrier mobility in Sn-doped Si-Ge (85 at % Si) alloys has been determined at doping levels from 4.3 × 1019 to 1.1 × 1020 cm−3 (0-0.21 at % Sn) using 300-K electrical measurements. The hole mobility has been shown to decrease with increasing Sn concentration. Comparison of experimental data with theoretical predictions suggests that the Sn atoms in Si-Ge alloys behave neither as neutral nor as ionized scattering centers. Estimates indicate that, at Sn concentrations from 4.3 × 1019 to 1.1 × 1020 cm−3, the scattering of current carriers is mainly due to the disordered Sn distribution. Pleiades Publishing, Inc., 2006 Khutsishvili E. Tavadze Institute of Metallurgy, Academy of Sciences of Georgia, pr. Kazbegi 15, 0160, Tbilisi, Georgia aut Kekelidze N. Dzhavakhishvili State University, pr. Chavchavadze 1, 0128, Tbilisi, Georgia aut Jzhakeli V. Dzhavakhishvili State University, pr. Chavchavadze 1, 0128, Tbilisi, Georgia aut Pagava M. Tavadze Institute of Metallurgy, Academy of Sciences of Georgia, pr. Kazbegi 15, 0160, Tbilisi, Georgia aut Inorganic Materials Nauka/Interperiodica 42/4(2006-04-01), 346-348 0020-1685 42:4<346 2006 42 10789 https://doi.org/10.1134/S0020168506040029 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506040029 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khutsishvili E. Tavadze Institute of Metallurgy, Academy of Sciences of Georgia, pr. Kazbegi 15, 0160, Tbilisi, Georgia aut NATIONALLICENCE 700 1- Kekelidze N. Dzhavakhishvili State University, pr. Chavchavadze 1, 0128, Tbilisi, Georgia aut NATIONALLICENCE 700 1- Jzhakeli V. Dzhavakhishvili State University, pr. Chavchavadze 1, 0128, Tbilisi, Georgia aut NATIONALLICENCE 700 1- Pagava M. Tavadze Institute of Metallurgy, Academy of Sciences of Georgia, pr. Kazbegi 15, 0160, Tbilisi, Georgia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/4(2006-04-01), 346-348 0020-1685 42:4<346 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer