caa a22 4500 467926999 CHVBK 20180406152932.0 cr unu---uuuuu 170328e20060401xx s 000 0 eng 10.1134/S0020168506040066 doi (NATIONALLICENCE)springer-10.1134/S0020168506040066 Chromium oxide nanolayers on gallium arsenide [Elektronische Daten] [Yu. Ezhovskii, A. Egorov] Ultrathin chromium oxide layers (nanostructures) are grown on (100) and (110) GaAs substrates by molecular layering (atomic layer deposition). The effect of process conditions on the layer composition and growth mechanism is analyzed. The dielectric properties of the layers and the quality of the dielectric-semiconductor interface are evaluated. Pleiades Publishing, Inc., 2006 Ezhovskii Yu St. Petersburg Technological Institute, Technical University, Moskovskii pr. 26, 190013, St. Petersburg, Russia aut Egorov A. St. Petersburg Technological Institute, Technical University, Moskovskii pr. 26, 190013, St. Petersburg, Russia aut Inorganic Materials Nauka/Interperiodica 42/4(2006-04-01), 368-373 0020-1685 42:4<368 2006 42 10789 https://doi.org/10.1134/S0020168506040066 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506040066 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ezhovskii Yu St. Petersburg Technological Institute, Technical University, Moskovskii pr. 26, 190013, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Egorov A. St. Petersburg Technological Institute, Technical University, Moskovskii pr. 26, 190013, St. Petersburg, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/4(2006-04-01), 368-373 0020-1685 42:4<368 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer