caa a22 4500 467927138 CHVBK 20180406152932.0 cr unu---uuuuu 170328e20060801xx s 000 0 eng 10.1134/S002016850608005X doi (NATIONALLICENCE)springer-10.1134/S002016850608005X Band structure of the diluted magnetic semiconductor MnxCd1− x GeAs2 [Elektronische Daten] [V. Yarzhemsky, S. Murashov, V. Nefedov, E. Murav'ev, A. Molchanov, A. Bagatur'yants, A. Knizhnik, V. Morozova] The electron-density-functional approach is used to calculate the band structure of the CdGeAs2 semiconductor and the diluted magnetic semiconductor MnxCd1−x GeAs2, which has a ferromagnetic structure at x = 0.06. The results indicate that the incorporation of Mn increases the band gap at its center and leads to the formation of a band derived from Mn levels, whose energy is a weak function of wave vector. The calculation results agree with experimental data. Pleiades Publishing, Inc., 2006 Yarzhemsky V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Murashov S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Nefedov V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Murav'ev E. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Molchanov A. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut Bagatur'yants A. Photochemistry Center, Russian Academy of Sciences, ul. Novatorov 7a, 119421, Moscow, Russia aut Knizhnik A. Russian Research Centre Kurchatov Institute, pl. Kurchatova 1, 123182, Moscow, Russia aut Morozova V. Moscow State University, Vorob'evy gory 1, 119899, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 835-838 0020-1685 42:8<835 2006 42 10789 https://doi.org/10.1134/S002016850608005X text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S002016850608005X text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yarzhemsky V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Murashov S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Nefedov V. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Murav'ev E. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Molchanov A. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Bagatur'yants A. Photochemistry Center, Russian Academy of Sciences, ul. Novatorov 7a, 119421, Moscow, Russia aut NATIONALLICENCE 700 1- Knizhnik A. Russian Research Centre Kurchatov Institute, pl. Kurchatova 1, 123182, Moscow, Russia aut NATIONALLICENCE 700 1- Morozova V. Moscow State University, Vorob'evy gory 1, 119899, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 835-838 0020-1685 42:8<835 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer