caa a22 4500 467927146 CHVBK 20180406152932.0 cr unu---uuuuu 170328e20060801xx s 000 0 eng 10.1134/S0020168506080048 doi (NATIONALLICENCE)springer-10.1134/S0020168506080048 Radical-beam gettering epitaxy of GaN layers on nitrogen-ion-implanted GaAs substrates [Elektronische Daten] [A. Georgobiani, I. Rogozin, M. Kotlyarevsky] Thin GaN films have been grown on N+-ion-implanted single-crystal GaAs(111) substrates by radical-beam gettering epitaxy, and their structural perfection has been assessed by high-resolution x-ray diffraction. At growth temperatures from 770 to 970 K, the layers consist of hexagonal GaN and have mirror-smooth surfaces. Nitrogen-ion implantation into the substrate favors the formation of a sharp film/substrate interface owing to radiation-enhanced gallium diffusion. Analysis of the GaN/GaAs structures by Auger electron and x-ray photoelectron spectroscopies in combination with depth profiling indicates that the GaN layer is enriched in gallium. The N: Ga atomic ratio in the films is 0.98: 1, which is attributable to radiation-enhanced gallium diffusion. Pleiades Publishing, Inc., 2006 Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Rogozin I. Berayansk State Pedagogical University, ul. Shmidta 4, 71118, Berdyansk, Ukraine aut Kotlyarevsky M. Academy of Management and Technology, ul. Uritskogo 3, 71118, Berdyansk, Ukraine aut Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 830-834 0020-1685 42:8<830 2006 42 10789 https://doi.org/10.1134/S0020168506080048 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506080048 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Georgobiani A. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Rogozin I. Berayansk State Pedagogical University, ul. Shmidta 4, 71118, Berdyansk, Ukraine aut NATIONALLICENCE 700 1- Kotlyarevsky M. Academy of Management and Technology, ul. Uritskogo 3, 71118, Berdyansk, Ukraine aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 830-834 0020-1685 42:8<830 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer