caa a22 4500 467927197 CHVBK 20180406152933.0 cr unu---uuuuu 170328e20060801xx s 000 0 eng 10.1134/S0020168506080139 doi (NATIONALLICENCE)springer-10.1134/S0020168506080139 Luminescent properties of vertically aligned ZnO nanorod arrays grown on (100) Si substrates [Elektronische Daten] [A. Gruzintsev, A. Red'kin, Z. Makovei, V. Kozlovskii, Ya. Skasyrskii] The effect of the dimensions of zinc oxide nanorods on their cathodoluminescence (CL) has been studied in the visible through UV spectral region. The results indicate that hexagonally faceted columnar nanordos grown on (100) Si substrates are aligned almost vertically. The chemistry of point defects in the nanorods is shown to depend on their position in the reactor during growth. The low-temperature CL spectra of the nanorods show peaks due to bound excitons and electron recombination through the nitrogen acceptor level. Electron microscopy results show that the ZnO nanocrystals are highly uniform in shape and size and that these parameters depend on the chemical vapor deposition conditions. Pleiades Publishing, Inc., 2006 Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut Kozlovskii V. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Skasyrskii Ya Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 872-876 0020-1685 42:8<872 2006 42 10789 https://doi.org/10.1134/S0020168506080139 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506080139 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gruzintsev A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Red'kin A. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Makovei Z. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow oblast, Russia aut NATIONALLICENCE 700 1- Kozlovskii V. Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 700 1- Skasyrskii Ya Lebedev Institute of Physics, Russian Academy of Sciences, Leninskii pr. 53, 119991, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/8(2006-08-01), 872-876 0020-1685 42:8<872 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer