caa a22 4500 467927405 CHVBK 20180406152933.0 cr unu---uuuuu 170328e20060501xx s 000 0 eng 10.1134/S0020168506050037 doi (NATIONALLICENCE)springer-10.1134/S0020168506050037 Mustafaeva S. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, AZ1143, Baku, Azerbaijan aut Dielectric properties of TlGa1 − x MnxS2 (0 ≤ x ≤ 0.03) single crystals [Elektronische Daten] [S. Mustafaeva] The electrical properties (loss tangent, real (ε) and imaginary (ε″) parts of complex dielectric permittivity, and ac conductivity across the layers) of TlGa1 − x MnxS2 (0 ≤ x ≤ 0.03) layered single crystals have been studied in the frequency range f = 5 × 104 to 3.5 × 107 Hz. The results demonstrate that the dielectric dispersion in the TlGa1 − x MnxS2 crystals has a relaxation nature. Partial substitution of manganese for gallium reduces the dielectric permittivity of TlGaS2 and changes the shape of the ε″(f) curve. Over the entire frequency range studied, the ac conductivity of the TlGa1 − x MnxS2 crystals varies as f 0.8, characteristic of hopping conduction through localized states near the Fermi level. The Fermi-level density of states, the spread of their energies, and the mean hop distance and time have been estimated. Pleiades Publishing, Inc., 2006 Inorganic Materials Nauka/Interperiodica 42/5(2006-05-01), 470-473 0020-1685 42:5<470 2006 42 10789 https://doi.org/10.1134/S0020168506050037 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506050037 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Mustafaeva S. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Javida 33, AZ1143, Baku, Azerbaijan aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/5(2006-05-01), 470-473 0020-1685 42:5<470 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer