caa a22 4500 467927723 CHVBK 20180406152934.0 cr unu---uuuuu 170328e20060201xx s 000 0 eng 10.1134/S0020168506020026 doi (NATIONALLICENCE)springer-10.1134/S0020168506020026 Effect of vacuum annealing on the phase composition of In/SnO/Si, In/SnO2/Si, and Sn/In2O3/Si heterostructures [Elektronische Daten] [A. Khoviv, T. Myachina, E. Goncharov, V. Logacheva, E. Kasatkina] The chemical interaction between indium and thin SnO and SnO2 films and between tin and thin In2O3 films during vacuum annealing was studied. The metallic films were deposited onto single-crystal silicon substrates by magnetron sputtering, the SnO and SnO2 films were produced by heat-treating the Sn film in flowing oxygen at 673 and 873 K, respectively, and the In2O3 film was produced by heat-treating the In film at 573 K. The results indicate that annealing of the In/SnO/Si and In/SnO2/Si heterostructures in vacuum (residual pressure of 0.33 × 10−2 Pa) at 773 K gives rise to the reduction of Sn and oxidation of In, whereas annealing of Sn/In2O3/Si causes partial tin substitution for indium in the cubic indium oxide lattice. Pleiades Publishing, Inc., 2006 Khoviv A. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut Myachina T. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut Goncharov E. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut Logacheva V. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut Kasatkina E. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut Inorganic Materials Nauka/Interperiodica 42/2(2006-02-01), 108-111 0020-1685 42:2<108 2006 42 10789 https://doi.org/10.1134/S0020168506020026 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506020026 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Khoviv A. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut NATIONALLICENCE 700 1- Myachina T. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut NATIONALLICENCE 700 1- Goncharov E. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut NATIONALLICENCE 700 1- Logacheva V. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut NATIONALLICENCE 700 1- Kasatkina E. Voronezh State University, Universitetskaya pl. 1, 394006, Voronezh, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/2(2006-02-01), 108-111 0020-1685 42:2<108 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer