caa a22 4500 467927820 CHVBK 20180406152934.0 cr unu---uuuuu 170328e20061101xx s 000 0 eng 10.1134/S0020168506110069 doi (NATIONALLICENCE)springer-10.1134/S0020168506110069 Thermoelectric properties of vapor-grown polycrystalline cubic SiC [Elektronische Daten] [L. Ivanova, P. Aleksandrov, K. Demakov] Polycrystalline cubic silicon carbide layers, undoped and codoped with nitrogen and boron, have been grown via thermal decomposition of methyltrichlorosilane vapor in hydrogen, and their transport properties (electrical conductivity, thermoelectric power, and thermal conductivity) have been studied in the temperature range 80-1100 K. Pleiades Publishing, Inc., 2006 Ivanova L. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut Aleksandrov P. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut Demakov K. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut Inorganic Materials Nauka/Interperiodica 42/11(2006-11-01), 1205-1209 0020-1685 42:11<1205 2006 42 10789 https://doi.org/10.1134/S0020168506110069 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1134/S0020168506110069 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ivanova L. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut NATIONALLICENCE 700 1- Aleksandrov P. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut NATIONALLICENCE 700 1- Demakov K. Kurchatov Institute Russian Research Center, pl. Akademika Kurchatova 1, 123182, Moscow, Russia aut NATIONALLICENCE 773 0- Inorganic Materials Nauka/Interperiodica 42/11(2006-11-01), 1205-1209 0020-1685 42:11<1205 2006 42 10789 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer