caa a22 4500 46794377X CHVBK 20180405193735.0 cr unu---uuuuu 170328e20041101xx s 000 0 eng 10.1007/s10512-004-0007-3 doi (NATIONALLICENCE)springer-10.1007/s10512-004-0007-3 (NATIONALLICENCE)springer-10.1007/s10512-005-0061-5 Zaletin V. Institute for Physicotechnical Problems., Russia aut Development of semiconductor detectors based on wide-gap materials [Elektronische Daten] [V. Zaletin] The properties of promising materials for uncooled semiconductor x- and γ-ray detectors are examined. Work being performed in this field in our country is briefly described. The spectrometric parameters of detectors based on CdTe, GaAs, HgI2 , and TlBr crystals are presented. Small, according to sensitivity, detectors based on Cdx Zn1-x Te and HgI2 have the best room-temperature resolution. Individual samples and experimental batches of such detectors have been tested and used under industrial and field conditions. The results obtained with TlBr crystals are interesting. Springer Science+Business Media, Inc., 2004 Atomic Energy Kluwer Academic Publishers-Consultants Bureau 97/5(2004-11-01), 773-780 1063-4258 97:5<773 2004 97 10512 https://doi.org/10.1007/s10512-004-0007-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s10512-004-0007-3 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Zaletin V. Institute for Physicotechnical Problems., Russia aut NATIONALLICENCE 773 0- Atomic Energy Kluwer Academic Publishers-Consultants Bureau 97/5(2004-11-01), 773-780 1063-4258 97:5<773 2004 97 10512 NATIONALLICENCE 100 1- Zaletin V. Institute for Physicotechnical Problems, Russia aut NATIONALLICENCE 856 40 https://doi.org/10.1007/s10512-005-0061-5 text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer