caa a22 4500 467944482 CHVBK 20180322200724.0 cr unu---uuuuu 170328e19861001xx s 000 0 eng 10.1007/BF02402992 doi (NATIONALLICENCE)springer-10.1007/BF02402992 (NATIONALLICENCE)springer-10.1007/BF00553790 Effects of annealing on the grain boundary potential barrier of ZnO varistor [Elektronische Daten] [Eun Kim, Myung Oh, Chong Kim] Effects of post heat treatment on the potential barrier at the grain boundaries of ZnO varistors will be discussed from the viewpoints of the surface state density and the donor concentration. Leakage current of varistors at a low electric field increases by annealing at 750° C in air or nitrogen due to the lowered barrier height corresponding to the decrease of surface state density, which may be explained with the phase transformation of the bismuth-rich intergranular layer. It is also observed that theV-I non-linearity of the annealed ceramics is generally recovered as the annealing (in air) time is extended. This can be explained by the heightened barrier potential attributed to the decrease of donor concentration in ZnO grains, which was confirmed by aid ofC-V measurements. The decrease of donor concentration by the annealing in air can be considered to be responsible for the thermal oxidation of interstitial zinc ions or oxygen vacancies. Chapman and Hall Ltd, 1986 Kim Eun Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut Oh Myung Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut Kim Chong Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut Journal of Materials Science Kluwer Academic Publishers 21/10(1986-10-01), 3491-3496 0022-2461 21:10<3491 1986 21 10853 https://doi.org/10.1007/BF02402992 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02402992 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Eun Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut NATIONALLICENCE 700 1- Oh Myung Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Chong Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers 21/10(1986-10-01), 3491-3496 0022-2461 21:10<3491 1986 21 10853 NATIONALLICENCE 856 40 https://doi.org/10.1007/BF00553790 text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer