caa a22 4500 467947333 CHVBK 20180322200725.0 cr unu---uuuuu 170328e19861101xx s 000 0 eng 10.1007/PL00020268 doi (NATIONALLICENCE)springer-10.1007/PL00020268 (NATIONALLICENCE)springer-10.1007/BF02431638 Kinetics and edge-growth effects of GaAs LPE layers grown in the Ga-As-Bi system [Elektronische Daten] [M. Panek, M. Ratuszek, M. Tłaczała] Studies of the growth kinetics of GaAs epitaxial layers obtained from Ga-As and Ga-As-Bi solutions are compared in this work. We applied an equilibrium cooling method in a classic liquid phase epitaxy (LPE) system with the use of slider-type boats. The studies were carried out for Ga-As-Bi solutions containing 0 to 95% wt % Bi and also for Ga-As solutions at the same technological parameters of the growth process for comparison purposes. It is shown that in the applied range of bismuth concentration in the alloys, the GaAs growth rate is 0.5 to 3 times higher than for classic Ga-As solutions. It is found that the presence of bismuth in the solutions eliminates a disadvantageous GaAs edge-growth on the layer edges and considerably decreases the number of meniscus lines on the deposited layer surface. Chapman and Hall Ltd., 1986 Panek M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut Ratuszek M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut Tłaczała M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 3977-3980 0022-2461 21:11<3977 1986 21 10853 https://doi.org/10.1007/PL00020268 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/PL00020268 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Panek M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut NATIONALLICENCE 700 1- Ratuszek M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut NATIONALLICENCE 700 1- Tłaczała M. Institute of Electron Technology, Technical University of Wroclaw, ul. Janiszewskiego 11/17, 50-372, Wroclaw, Poland aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 3977-3980 0022-2461 21:11<3977 1986 21 10853 NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02431638 text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer