caa a22 4500 467953201 CHVBK 20180322200726.0 cr unu---uuuuu 170328e19861101xx s 000 0 eng 10.1007/BF00553462 doi (NATIONALLICENCE)springer-10.1007/BF00553462 (NATIONALLICENCE)springer-10.1007/BF02431645 Vickers microhardness indentation and fracture mechanics of chalcogenide arsenic-selenium glasses [Elektronische Daten] [M. Hammam, J. Santiago] Measurements of Vickers microhardness have been carried out on As x Se1−x glass (0.28 <x < 0.60). The diamond pyramid hardness number as a function of composition revealed a maximum at 40% As, the stoichiometric composition, indicating that this composition is the most ordered and strongest of the alloys. Deviation from stoichiometry was found to increase the disorder and introduce weaker bonds. An attempt was made to use the indentation approach to determine the fracture toughness of the investigated glasses. Therefore, the extent of surface traces of well-developed penny-like (conchoidal) cracks extending from the corners of Vickers indents were measured and found to obey Lawn's relationP/C 3/2 = constant (whereP is the indenter load andC is the characteristic crack dimension). An approximate value of the fracture toughness was inferred from these measurements. Chapman and Hall Ltd., 1986 Hammam M. Center of Chemical Electronics, Electrical Engineering Department, University of Pennsylvania, 19104, Philadelphia, Pennsylvania, USA aut Santiago J. Center of Chemical Electronics, Electrical Engineering Department, University of Pennsylvania, 19104, Philadelphia, Pennsylvania, USA aut Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 4019-4023 0022-2461 21:11<4019 1986 21 10853 https://doi.org/10.1007/BF00553462 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF00553462 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hammam M. Center of Chemical Electronics, Electrical Engineering Department, University of Pennsylvania, 19104, Philadelphia, Pennsylvania, USA aut NATIONALLICENCE 700 1- Santiago J. Center of Chemical Electronics, Electrical Engineering Department, University of Pennsylvania, 19104, Philadelphia, Pennsylvania, USA aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 4019-4023 0022-2461 21:11<4019 1986 21 10853 NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02431645 text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer