caa a22 4500 467953732 CHVBK 20180405193745.0 cr unu---uuuuu 170328e20040901xx s 000 0 eng 10.1007/s11018-005-0016-1 doi (NATIONALLICENCE)springer-10.1007/s11018-005-0016-1 (NATIONALLICENCE)springer-10.1007/s11018-005-0052-x Bipolar magnetotransistor with the base in a well [Elektronische Daten] [A. Kozlov, R. Tikhonov] A lateral bipolar magnetotransistor with a base formed in a well (BMTBW) with external connection of the base with the well is studied by means of equipment and technological modelling. It is shown that in the optimized BMBTW structure there is formation of charge carrier flows and their volumetric recombination that changes under the action of a magnetic field. The choice of structural parameter and BMTBW operating scheme makes it possible to increase the relative sensitivity with respect to current and to improve the p-n-junction isolation of the instrument in micromagnetoelectronics. Springer Science+Business Media, Inc., 2004 p-n-junction isolation nationallicence magnetic field sensor nationallicence bipolar magnetotransistor nationallicence current sensitivity nationallicence p-n-junction isolation nationallicence Kozlov A. aut Tikhonov R. aut Measurement Techniques Kluwer Academic Publishers-Consultants Bureau 47/9(2004-09-01), 926-931 0543-1972 47:9<926 2004 47 11018 https://doi.org/10.1007/s11018-005-0016-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11018-005-0016-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kozlov A. aut NATIONALLICENCE 700 1- Tikhonov R. aut NATIONALLICENCE 773 0- Measurement Techniques Kluwer Academic Publishers-Consultants Bureau 47/9(2004-09-01), 926-931 0543-1972 47:9<926 2004 47 11018 NATIONALLICENCE 856 40 https://doi.org/10.1007/s11018-005-0052-x text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer