caa a22 4500 467954569 CHVBK 20180322200727.0 cr unu---uuuuu 170328e19861101xx s 000 0 eng 10.1007/BF02431619 doi (NATIONALLICENCE)springer-10.1007/BF02431619 (NATIONALLICENCE)springer-10.1007/BF00553436 Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2 [Elektronische Daten] [Seiji Motojima, Noriyuki Iwamori, Tatsuhiko Hattori] Si3N4 layers were obtained on a quartz substrate from a gas mixture of Si2Cl6, NH3 and H2 under a reduced pressure in a temperature range of 800 to 1300‡ C. Amorphous Si3N4 layers that were dense and adherent to the substrate were obtained in a temperature range of 800 to 1100‡ C. On the other hand,α-Si3N4 layers were obtained at 1200‡ C and a source-gas ratio (N/Si) of 1.33 to 1.77. The lowest deposition temperature of amorphous Si3N4 was considered to be about 700‡ C. The microhardness of amorphous Si3N4 obtained in a temperature range of 800 to 1100‡ C was 2400 to 2600 kg mm−2 (load: 50 g), and that ofα-Si3N4 obtained at 1200‡ C was 3400 kg mm−2. Chlorine contents in the Si3N4 layer decreased with increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure. Chapman and Hall Ltd., 1986 Motojima Seiji Department of Industrial Chemistry, Faculty of Engineering, Gifu University, 501-11, Gifu, Japan aut Iwamori Noriyuki Department of Industrial Chemistry, Faculty of Engineering, Gifu University, 501-11, Gifu, Japan aut Hattori Tatsuhiko Research Laboratory, Toa-Gosei Chemical Industry Co. Ltd, 1-1 Funamicho, Minato-ku, 455, Nagoya, Japan aut Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 3836-3842 0022-2461 21:11<3836 1986 21 10853 https://doi.org/10.1007/BF02431619 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02431619 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Motojima Seiji Department of Industrial Chemistry, Faculty of Engineering, Gifu University, 501-11, Gifu, Japan aut NATIONALLICENCE 700 1- Iwamori Noriyuki Department of Industrial Chemistry, Faculty of Engineering, Gifu University, 501-11, Gifu, Japan aut NATIONALLICENCE 700 1- Hattori Tatsuhiko Research Laboratory, Toa-Gosei Chemical Industry Co. Ltd, 1-1 Funamicho, Minato-ku, 455, Nagoya, Japan aut NATIONALLICENCE 773 0- Journal of Materials Science Kluwer Academic Publishers 21/11(1986-11-01), 3836-3842 0022-2461 21:11<3836 1986 21 10853 NATIONALLICENCE 856 40 https://doi.org/10.1007/BF00553436 text/html Onlinezugriff via DOI Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer NATIONALLICENCE NATIONALLICENCE NL-springer