caa a22 4500 469090944 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670913 doi (NATIONALLICENCE)springer-10.1007/BF02670913 Electrical characterization of very-low energy (0-30 eV) CI-Radical/Ion-beam-etching induced damage using two-dimensional electron gas heterostructures [Elektronische Daten] [Yuichi Ide, Shigeru Kohmoto, Kiyoshi Asakawa] Damage induced by very low energy (30 eV) Cl reactive ion beam etching (RIBE) and radical etching (RE) has been electrically characterized. GaAs/n-AlGaAs two-dimensional electron gas heterostructures were used as damage sensitive probes. Sheet carrier concentrations and Hall mobilities were measured at 77 K, under dark as well as illuminated conditions. By carefully designing the sample structure, the damaged layer thickness could be estimated by comparing dark and illuminated data. In case of RE, no degradation was detected at depths as shallow as 25 nm from the etched surface. For 30 eV-RIBE, the damage was detected but found to be reasonably small (38% decrease in electron mobility) and shallow (<50 nm). Electrical and optical damage are compared briefly. TMS, 1992 Radical etching nationallicence reactive ion beam etching nationallicence damage characterization nationallicence two dimensional electron gas nationallicence Ide Yuichi Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut Kohmoto Shigeru Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut Asakawa Kiyoshi Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 3-7 0361-5235 21:1<3 1992 21 11664 https://doi.org/10.1007/BF02670913 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670913 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ide Yuichi Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut NATIONALLICENCE 700 1- Kohmoto Shigeru Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut NATIONALLICENCE 700 1- Asakawa Kiyoshi Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, 305, Tsukuba, Ibaraki, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 3-7 0361-5235 21:1<3 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer