caa a22 4500 469090952 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670923 doi (NATIONALLICENCE)springer-10.1007/BF02670923 PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation [Elektronische Daten] [Carey Pico, Michael Lieberman, Nathan Cheung] The feasibility of plasma immersion ion implantation (PHI) for multi-implant integrated circuit fabrication is demonstrated. Patterned Si wafers were immersed in a BF3 plasma forp-type doping steps. Boron implants of up to 3 × 1015 atoms/cm2 were achieved by applying microsecond negative voltage (-2 to -30 kV) pulses to the wafers at a frequency of 100 Hz to 1 kHz. After implantation the wafers were annealed using rapid thermal annealing (RTA) at 1060° C for 20 sec to activate the dopants and to recrystallize the implant damaged Si. For the PMOS process sequence both the Si source-drain and polycrystalline Si (poly-Si) gate doping steps were performed using PIII. The functionality of several types of devices, including diodes, capacitors, and transistors, were electrically measured to evaluate the compatibility of PIII with MOS process integration. TMS, 1992 Si nationallicence plasma immersionion implantation nationallicence shallow junctions nationallicence BF3 nationallicence Pico Carey Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut Lieberman Michael Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut Cheung Nathan Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 75-79 0361-5235 21:1<75 1992 21 11664 https://doi.org/10.1007/BF02670923 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670923 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pico Carey Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut NATIONALLICENCE 700 1- Lieberman Michael Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut NATIONALLICENCE 700 1- Cheung Nathan Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, Berkeley, CA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 75-79 0361-5235 21:1<75 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer