caa a22 4500 469090979 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670926 doi (NATIONALLICENCE)springer-10.1007/BF02670926 Examination of barrier layers for lead zirconate titanate thin films [Elektronische Daten] [Lynnette Madsen, Louise Weaver] The selection of a suitable electrode and barrier layer are important in the integration of Lead Zirconate Titanate (PZT) into memory circuits. Five materials were evaluated using physical analysis techniques as possible barrier layers. Glancing-angle x-ray diffraction was used as the initial assessment to determine the structure of the PZT. With either silicon or MoSi2 as a base layer, it was not possible to obtain a perovskite PZT structure under the conditions investigated. Although the desired crystal structure could be obtained with TiN as a base material, the oxygen-rich sputtering conditions for PZT had transformed this layer to an oxide making it unsuitable as electrode. PZT grown on an indium tin oxide (ITO) coated glass substrate also had a perovskite structure and good electrical properties. Scanning electron microscopy showed good adhesion between the layers, but transmission electron microscopy and secondary ion mass spectroscopy revealed Pb-rich areas residing in the glass beneath the ITO. PZT on platinum appeared to be the only promising barrier layer studied as there was no indication of Pb diffusion into the underlying layers and the desired crystal structure was obtained. TMS, 1992 Lead zirconate titanate nationallicence ferroelectric nationallicence perovskite nationallicence barrier layer nationallicence Madsen Lynnette Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada aut Weaver Louise Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 93-97 0361-5235 21:1<93 1992 21 11664 https://doi.org/10.1007/BF02670926 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670926 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Madsen Lynnette Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada aut NATIONALLICENCE 700 1- Weaver Louise Department of Materials Science, McMaster University, L8S 4ML, Hamilton, Ontario, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 93-97 0361-5235 21:1<93 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer