caa a22 4500 469091002 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670921 doi (NATIONALLICENCE)springer-10.1007/BF02670921 Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x [Elektronische Daten] [M. Sanganeria, D. Grider, M. öztürk, J. Wortman] In-situ doped polycrystalline SixGe1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH2Cl2, GeH4 and B2H6 in a H2 carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B2H6 flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B2H6 flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B2H6 flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline SixGe1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon. TMS, 1992 RTCVD nationallicence LPCVD nationallicence RTA nationallicence in-situ nationallicence diborane nationallicence Si nationallicence Ge nationallicence mobility nationallicence Sanganeria M. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut Grider D. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut öztürk M. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut Wortman J. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 61-64 0361-5235 21:1<61 1992 21 11664 https://doi.org/10.1007/BF02670921 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670921 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sanganeria M. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Grider D. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- öztürk M. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Wortman J. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 61-64 0361-5235 21:1<61 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer