caa a22 4500 469091010 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670920 doi (NATIONALLICENCE)springer-10.1007/BF02670920 Hydrogen fluoride vapor etching for Pre-Epi silicon surface preparation [Elektronische Daten] [Robert McIntosh, Tung-Sheng Kuan, Edouard Defresart] Hydrogen fluoride vapor etching of silicon dioxide was studied for its applicability to the preparation of silicon surfaces for low temperature epitaxy. The etching behavior of hydrogen fluoride vapor with and without added water vapor was studied qualitatively by observing changes in hydrophobicity, and quantitatively using ellipsometry. Epi films grown on vapor-treated surfaces were evaluated using transmission electron microscopy and by fabricating polysilicon-emitter diodes. It was found that complete removal of the silicon dioxide monolayer closest to the wafer surface proceeded much more slowly than etching of a bulk oxide layer. A mechanism for the reaction of HF and SiO2 is proposed, in which the etching of a bulk film takes place in a thin aqueous layer on the oxide surface, while the removal of the final monolayer of oxide takes place as a gas-solid reaction. TMS, 1992 Hydrogen fluoride vapor nationallicence silicon epitaxy nationallicence McIntosh Robert IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut Kuan Tung-Sheng IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut Defresart Edouard IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 57-60 0361-5235 21:1<57 1992 21 11664 https://doi.org/10.1007/BF02670920 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670920 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- McIntosh Robert IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut NATIONALLICENCE 700 1- Kuan Tung-Sheng IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut NATIONALLICENCE 700 1- Defresart Edouard IBM T. J. Watson Research Center, P.O. Box 218, 10598, Yorktown Heights, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 57-60 0361-5235 21:1<57 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer