caa a22 4500 469091029 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670929 doi (NATIONALLICENCE)springer-10.1007/BF02670929 Electrical and structural characterization of GaAs vertical-sidewall epilayers grown by atomic layer epitaxy [Elektronische Daten] [D. Gladden, W. Goodhue, C. Wang, G. Lincoln] Electrical and structural measurements have been performed on novel test structures incorporatingp-type GaAs epilayers grown by organometallic vapor phase atomic layer epitaxy on the vertical sidewalls of semi-insulating GaAs rods formed by ion-beam-assisted etching. Preliminary results indicate that the vertical-sidewall epilayers have excellent crystal quality and sufficient electrical quality to support a sidewall-epitaxy device technology. Some examples of candidate electronic, electrooptic, and photonic devices for vertical-sidewall fabrication are FETs, resistors, waveguides, modulators, and quantum-wire and quantum-dot lasers. TMS, 1992 Sidewall epitaxy nationallicence atomic layer epitaxy nationallicence organometallic vapor phase epitaxy, and GaAs nationallicence Gladden D. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Goodhue W. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Wang C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Lincoln G. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 109-114 0361-5235 21:1<109 1992 21 11664 https://doi.org/10.1007/BF02670929 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670929 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gladden D. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 700 1- Goodhue W. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 700 1- Wang C. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 700 1- Lincoln G. Lincoln Laboratory, Massachusetts Institute of Technology, 02173-9108, Lexington, Massachusetts aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 109-114 0361-5235 21:1<109 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer