caa a22 4500 469091037 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670924 doi (NATIONALLICENCE)springer-10.1007/BF02670924 Formation of titanium and cobalt germanides on Si (100) using rapid thermal processing [Elektronische Daten] [S. Ashburn, M. Öztürk, J. Wortman, G. Harris, J. Honeycutt, D. Maher] Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides were found to be 20 µΩ-cm and 35.3µΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures (425° C); however, the stability of the material is poor at elevated temperatures. TMS, 1992 Germanide nationallicence silicide nationallicence germanium nationallicence silicon nationallicence titanium nationallicence cobalt nationallicence RTCVD nationallicence RTA nationallicence LPCVD nationallicence CVD nationallicence Ashburn S. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Öztürk M. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Wortman J. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Harris G. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Honeycutt J. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Maher D. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 81-86 0361-5235 21:1<81 1992 21 11664 https://doi.org/10.1007/BF02670924 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670924 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ashburn S. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Öztürk M. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Wortman J. Department of Electrical & Computer Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Harris G. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Honeycutt J. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 700 1- Maher D. Department of Materials Science and Engineering, North Carolina State University, 27695-7911, Raleigh, NC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 81-86 0361-5235 21:1<81 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer