caa a22 4500 469091045 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670933 doi (NATIONALLICENCE)springer-10.1007/BF02670933 TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices [Elektronische Daten] [K. Mahalingam, Y. Nakamura, N. Otsuka, H. Lee, M. Hafich, G. Robinson] The influence of growth interruption during the MBE growth of (100) In0.5Ga0.5P/GaAs superlattices is investigated by cross-sectional TEM. A roughening of the growth front is observed during an interruption after the exchange of the group-V molecular beams. The roughening of growth front occurs due to a spontaneous change in the growth orientation of the superlattice from [100] to 〈311〉 directions. This change in growth orientation is characterized by an initial formation of V-shaped grooves with {311} facets on the GaAs growth front which eventually lead to the formation of regions of {311} superlattice structures. The direction of V-shaped grooves is along the [011] axis, which is parallel to the surface dangling bonds of the group V atoms in the unreconstructed (100) plane. The most critical stage for the spontaneous change of the growth orientation is the interruption after the growth of a GaAs layer with the P2 flux. TMS, 1992 InGaP/GaAs superlattices nationallicence MBE nationallicence TEM nationallicence growth orientation nationallicence Mahalingam K. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut Nakamura Y. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut Otsuka N. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut Lee H. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut Hafich M. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut Robinson G. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 129-133 0361-5235 21:1<129 1992 21 11664 https://doi.org/10.1007/BF02670933 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670933 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mahalingam K. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut NATIONALLICENCE 700 1- Nakamura Y. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut NATIONALLICENCE 700 1- Otsuka N. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN aut NATIONALLICENCE 700 1- Lee H. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut NATIONALLICENCE 700 1- Hafich M. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut NATIONALLICENCE 700 1- Robinson G. Dept. of Electrical Engineering, Colorado State University, 80523, Ft. Collins, CO aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 129-133 0361-5235 21:1<129 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer