caa a22 4500 46909107X CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670917 doi (NATIONALLICENCE)springer-10.1007/BF02670917 Non-Equilibium Al-Ga interdiffusion in MOCVD reactor annealed AIGaAs quantum well heterostructures [Elektronische Daten] [S. Seshadri, L. Guido, T. Moise, J. Beggy, T. Cunningham, R. Barker, R. Sacks] AlGaAs-GaAs quantum well heterostructures have been annealed in an atmospheric pressure MOCVD reactor under an AsH3/H2 ambient. Photoluminescence spectra show a uniform and reproducible increase in the effective quantum well band-gap. Energy shift data indicate that Al-Ga interdiffusion occurs under "non-equilibrium” conditions resulting in depth-dependent Al-Ga interdiffusion such that quantum wells close to the surface disorder less than those further away. Activation energies vary from approximately 5.1-5.2 eV for the "equilibrium” case to 3.2-3.6 eV for the "non-equilibrium” case. These results suggest that caution must be exercised in using reported activation energies to characterize Al-Ga interdiffusion for photonic device fabrication. TMS, 1992 AlGaAs/GaAs nationallicence Al-Ga interdiffusion nationallicence MOCVD nationallicence quantum well hetero-structure nationallicence Seshadri S. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Guido L. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Moise T. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Beggy J. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Cunningham T. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Barker R. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut Sacks R. United Technologies Research Center, 06108, Silverlane, East Hartford, CT aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 33-38 0361-5235 21:1<33 1992 21 11664 https://doi.org/10.1007/BF02670917 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670917 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Seshadri S. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Guido L. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Moise T. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Beggy J. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Cunningham T. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Barker R. Center for Microelectronics Materials and Structures, Yale University, P.O. Box 2157, 06520, Yale Station, New Haven, Connecticut aut NATIONALLICENCE 700 1- Sacks R. United Technologies Research Center, 06108, Silverlane, East Hartford, CT aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 33-38 0361-5235 21:1<33 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer