caa a22 4500 469091096 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670925 doi (NATIONALLICENCE)springer-10.1007/BF02670925 Modelling of growth rate uniformity of CdTe epilayer by MOCVD [Elektronische Daten] [Yu-Hua Lee, Kan-Sen Chou] A 2-dimensional mathematical model was established to simulate the growth rate uniformity of CdTe epilayers which were grown in a horizontal MOCVD reactor. Both transport phenomena and the surface decomposition kinetics of diethyl telluride were considered. The calculated effects of reactor pressure and substrate temperature on growth rates along the flow axis were compared with experimental results. They agreed well with each other. These effects were then explained by the relative importance of mass transfer to reaction kinetics. In general, higher growth temperature and higher reactor pressure both favor a mass transfer controlled CVD growth situation. However, to obtain uniformly grown epilayers, one would wish to operate under reaction kinetics controlled region,i.e. low substrate temperature and low reactor pressure. TMS, 1992 Growth rate simulations nationallicence CdTe nationallicence MOCVD nationallicence C : concentration, = P/RT, moles/cm3 nationallicence C o : inlet concentration, moles/cm nationallicence Cp : heat capacity,J/g K nationallicence D : diffusion coefficient, cm2/sec nationallicence DaI : Damkohler number group I,kL/u, dimensionless nationallicence g : gravitational acceleration, 980 cm/sec2 nationallicence Gr : Grashoff number, gρ2L3β ΔT/μ2, dimensionless nationallicence h : heat transfer coefficient between quartz and outside air, w/cm2-K nationallicence i : dummy subscript, dimensionless nationallicence J : mass flux, mole/cm2-sec nationallicence k : decomposition rate constant for DETe, 1/sec nationallicence L : free space height above susceptor, cm nationallicence M : molecular weight, gm/mole nationallicence P : pressure, atm nationallicence R : universal gas constant, 82.057 atm-cm3/ mole-K nationallicence Ra : Rayleigh number, gCpp2L3βΔT/μκ, dimensionless nationallicence Re : Reynold number,Luρ/μ, dimensionless nationallicence s : subscript, meaning surface, no dimension nationallicence t : time, sec nationallicence T : absolute temperature, K nationallicence u : velocity inz direction, cm/sec nationallicence u o : inlet velocity (plug flow), cm/sec nationallicence v : velocity iny direction, cm/sec nationallicence X : mass fraction of each component, dimensionless nationallicence y : vertical coordinate, cm nationallicence Z : horizontal coordinate, cm Greek nationallicence β : thermal expansion coefficient, 1/K nationallicence θ : tilt angle of susceptor, radian nationallicence μ : viscosity, gm/cm-sec nationallicence ρ : gas density, gm/cm3 nationallicence κ : thermal conductivity, w/cm-K nationallicence κ' : thermal diffusion ratio, dimensionless nationallicence Lee Yu-Hua Department of Chemical Engineering, National Tsing Hua University, 30043, Hsinchu, Taiwan, R.O.C. aut Chou Kan-Sen Department of Chemical Engineering, National Tsing Hua University, 30043, Hsinchu, Taiwan, R.O.C. aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 87-92 0361-5235 21:1<87 1992 21 11664 https://doi.org/10.1007/BF02670925 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670925 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Yu-Hua Department of Chemical Engineering, National Tsing Hua University, 30043, Hsinchu, Taiwan, R.O.C aut NATIONALLICENCE 700 1- Chou Kan-Sen Department of Chemical Engineering, National Tsing Hua University, 30043, Hsinchu, Taiwan, R.O.C aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 87-92 0361-5235 21:1<87 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer