caa a22 4500 46909110X CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670918 doi (NATIONALLICENCE)springer-10.1007/BF02670918 The influence of plasma etching on trap levels in InP [Elektronische Daten] [L. He, W. Anderson] Electroreflectance (ER) and deep level transient spectroscopy (DLTS) were carried out to characterize the effects of CF4 plasma etching on defect levels in InP. Different chamber gas pressures were conducted to study effects on the etching result. Similar ER spectra were obtained from the starting InP wafer and the wafer after plasma etching plus rapid thermal annealing (RTA) which showed good restoration of material properties by RTA. Two impurity of structural related features, T1 and T2, were observed from these ER spectra at energy positions about 0.112 and 0.178 eV below bandgap. Two trap levels, El and E2, with activation energy 0.15 and 0.55 eV, were detected from the initial wafer by DLTS. Trap El may correlate with the Tl and T2 levels observed by ER. Similar traps were found in plasma etched samples after rapid thermal annealing with one of the DLTS peaks labeled E2 shifted to the higher temperature side as the plasma etching chamber pressure increased. We identified El to be a residual electron trap from material growth and E2 to be an interface trap arising from Schottky diode fabrication. TMS, 1992 InP nationallicence plasma etching nationallicence surface defects nationallicence He L. Department of Electrical and Computer Engineering, State University of New York at Buffalo Center for Electronic and Electric-optic Materials, 217 Bonner Hall, 14260, Amherst, NY aut Anderson W. Department of Electrical and Computer Engineering, State University of New York at Buffalo Center for Electronic and Electric-optic Materials, 217 Bonner Hall, 14260, Amherst, NY aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 39-43 0361-5235 21:1<39 1992 21 11664 https://doi.org/10.1007/BF02670918 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670918 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- He L. Department of Electrical and Computer Engineering, State University of New York at Buffalo Center for Electronic and Electric-optic Materials, 217 Bonner Hall, 14260, Amherst, NY aut NATIONALLICENCE 700 1- Anderson W. Department of Electrical and Computer Engineering, State University of New York at Buffalo Center for Electronic and Electric-optic Materials, 217 Bonner Hall, 14260, Amherst, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 39-43 0361-5235 21:1<39 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer