caa a22 4500 469091118 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670927 doi (NATIONALLICENCE)springer-10.1007/BF02670927 Ultraviolet laser-assisted surface treatment of InP with phosphine gas [Elektronische Daten] [Takashi Sugino, Hiroyuki Itoh, Aniroot Boonyasirikool, Junji Shirafuji] InP surface has been treated with phosphine (PH3) gas photodecomposed by ArF excimer laser at a temperature as low as 150° C. It is shown by Auger electron spectroscopy analysis that the photolytic process of PH3 gas is capable of removing native oxide and depositing simultaneously amorphous P film on the InP surface. Moreover, hydrogenation occurs on and near the surface of InP. An enhancement of the barrier height up to 0.63 eV is demonstrated for MIS Schottky junctions with a thin P layer formed on the treated InP substrates. Furthermore, it is shown that the barrier height varies depending on work function of the Schottky metal on the treated InP. This suggests that the present process causes a reduction in the surface state density which permits weakening of the Fermi level pinning at the surface of InP. TMS, 1992 InP nationallicence PH3 photodecomposition nationallicence MIS Schottky junction nationallicence Sugino Takashi Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut Itoh Hiroyuki Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut Boonyasirikool Aniroot Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut Shirafuji Junji Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 99-104 0361-5235 21:1<99 1992 21 11664 https://doi.org/10.1007/BF02670927 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670927 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sugino Takashi Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Itoh Hiroyuki Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Boonyasirikool Aniroot Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Shirafuji Junji Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, 565, Suita, Osaka, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 99-104 0361-5235 21:1<99 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer