caa a22 4500 469091142 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02670919 doi (NATIONALLICENCE)springer-10.1007/BF02670919 Thin gate and analog capacitor dielectrics for submicron device fabrication [Elektronische Daten] [Sing-Pin Tay, Joseph Ellul] The miniaturization of devices in ULSI circuits are accompanied by shrinking vertical, as well as horizontal, device parameters such as junction depth, lateral impurity diffusion and film thicknesses. This is achieved by decoupling process steps,i.e. processing at a reduced thermal budget. However, as device dimensions decrease, greater demand in transistor noise immunity and reliability may not be achievable with low-temperature (<900° C) oxidation processes. Low temperature CVD ONO (oxide-nitride-oxide) dielectrics have been evaluated for applications in ULSI gate as well as capacitor structures. Time dependent dielectric breakdown data have shown that ONO has longer lifetime than thermal oxide of equivalent thickness. Such stacked dielectrics nevertheless result in complex processing steps. With the advances in rapid thermal processing equipment today, rapid thermal oxide (RTO) has been shown to offer potential benefits of high temperature without significant addition to the overall thermal budget. We have shown that transistors with RTO gate oxides exhibit longer lifetime and lower noise compared to those with furnace grown gate oxides. We have also shown that interpoly RTO oxides have remarkable dielectric strength of >8 MV/cm. For enhanced radiation hardness and impurity masking capability as well as higher permittivity, rapid thermal nitrided oxides may be a potential choice deserving further evaluation. These nitrided oxides must be reoxidized to reduce densities of interface states and electron traps created during the nitridation process. TMS, 1992 Si nationallicence thin dielectrics nationallicence MOS transistors nationallicence analog capacitors nationallicence rapid thermal oxidation nationallicence Tay Sing-Pin Northern Telecom Electronics Ltd, 185 Corkstown Rd., K2H 8V4, Nepean, Ontario, Canada aut Ellul Joseph Northern Telecom Electronics Ltd, 185 Corkstown Rd., K2H 8V4, Nepean, Ontario, Canada aut Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 45-55 0361-5235 21:1<45 1992 21 11664 https://doi.org/10.1007/BF02670919 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02670919 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Tay Sing-Pin Northern Telecom Electronics Ltd, 185 Corkstown Rd., K2H 8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 700 1- Ellul Joseph Northern Telecom Electronics Ltd, 185 Corkstown Rd., K2H 8V4, Nepean, Ontario, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/1(1992-01-01), 45-55 0361-5235 21:1<45 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer