caa a22 4500 469091177 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655432 doi (NATIONALLICENCE)springer-10.1007/BF02655432 Effects of annealing conditions on the properties of tantalum oxide films on silicon substrates [Elektronische Daten] [S. Park, Y. Baek, J. Lee, C. Park, H. Im] The formation of a SiO2 layer at the Ta2O5/Si interface is observed by annealing in dry O2 or N2 and the thickness of this layer increases with an increase in annealing temperature. Leakage current of thin (less than 40 nm thick) Ta2O5 films decreases as the annealing temperature increases when annealed in dry O2 or N2. The dielectric constant vs annealing temperature curve shows a maximum peak at 750 or 800° C resulting from the crystallization of Ta2O5. The effect is larger in thicker Ta2O5 films. But the dielectric constant decreases when annealed at higher temperature due to the formation and growth of a SiO2 layer at the interface. The flat band voltage and gate voltage instability as a function of annealing temperature can be explained in terms of the growth of interfacial SiO2. The electrical properties of Ta2O5 as a function of annealing conditions do not depend on the fabrication method of Ta2O5 but strongly depend on the thickness of Ta2O5 layer. TMS, 1992 Ta2O5 nationallicence SiO2 nationallicence Si nationallicence annealing nationallicence Park S. Semiconductor R & D Lab., Hyundai Electronics Industries Korea, Korea aut Baek Y. Semiconductor R & D Lab., Hyundai Electronics Industries Korea, Korea aut Lee J. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut Park C. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut Im H. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 635-639 0361-5235 21:6<635 1992 21 11664 https://doi.org/10.1007/BF02655432 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655432 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Park S. Semiconductor R & D Lab., Hyundai Electronics Industries Korea, Korea aut NATIONALLICENCE 700 1- Baek Y. Semiconductor R & D Lab., Hyundai Electronics Industries Korea, Korea aut NATIONALLICENCE 700 1- Lee J. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut NATIONALLICENCE 700 1- Park C. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut NATIONALLICENCE 700 1- Im H. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 635-639 0361-5235 21:6<635 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer