caa a22 4500 469091185 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655433 doi (NATIONALLICENCE)springer-10.1007/BF02655433 Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy [Elektronische Daten] [Kazuhiko Nozawa, Yoshiji Horikoshi] This paper reports a promising approach for reducing the density of threading dislocations in GaAs on Si. In x Ga1-x As/GaAs strained-layer superlattices (SLSs) grown by migration-enhanced epitaxy at 300° C on GaAs/Si acted as barriers to threading dislocations. Unlike conventional high-temperature-grown SLSs, the low-temperature-grown SLSs were hardly relaxed by the formation of misfit dislocations at GaAs/SLS interfaces, and this allowed them to accumulate considerable strain. New threading dislocation generation due to the misfit dislocation was also suppressed. These factors caused effective bending of threading dislocations and significantly reduced the dislocation density. For the samples that had an SLS withx = 0.3, the average etch-pit density was 7 × 104 cm-2, which is comparable to that of GaAs substrates. TMS, 1992 MEE nationallicence GaAs on Si nationallicence SLS nationallicence low-temperature growth nationallicence heteroepitaxy nationallicence dislocation density nationallicence TEM nationallicence EPD nationallicence Nozawa Kazuhiko NTT Basic Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, 180, Tokyo, Japan aut Horikoshi Yoshiji NTT Basic Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, 180, Tokyo, Japan aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 641-645 0361-5235 21:6<641 1992 21 11664 https://doi.org/10.1007/BF02655433 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655433 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nozawa Kazuhiko NTT Basic Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, 180, Tokyo, Japan aut NATIONALLICENCE 700 1- Horikoshi Yoshiji NTT Basic Research Laboratories, 3-9-11 Midori-cho, Musashino-shi, 180, Tokyo, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 641-645 0361-5235 21:6<641 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer