caa a22 4500 469091193 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655422 doi (NATIONALLICENCE)springer-10.1007/BF02655422 Growth by CVT and characterization of Hg1-xCdxTe epitaxial layers [Elektronische Daten] [Heribert Wiedemeier, Yi-Gao Sha] Single crystal epitaxial layers of Hg1-x Cd x Te were grown on CdTe substrates employing the chemical vapor transport technique. Different growth temperatures, substrate orientations, and various pressures of Hgl2 as a transport agent were used while the source materials had a fixed composition ofx = 0.2. The epilayers are of nearly uniform composition to a depth of about one-half of the layer thickness. Chemical etching of the as-grown epilayers revealed low etch pit densities in the range of 103-104 cm−2. Rectangle-shaped etch pits are observed for the first time on the (100) oriented epilayers of this material. The growth temperature and Hgl2 pressure used for the growth experiments have significant effects on the layer morphology and composition. TMS, 1992 HgCdTe nationallicence CVT nationallicence HgI2 nationallicence epitaxial growth nationallicence Wiedemeier Heribert Department of Chemistry, Rensselaer Polytechnic Institute, 12180-3590, Troy, New York aut Sha Yi-Gao Department of Chemistry, Rensselaer Polytechnic Institute, 12180-3590, Troy, New York aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 563-573 0361-5235 21:6<563 1992 21 11664 https://doi.org/10.1007/BF02655422 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655422 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wiedemeier Heribert Department of Chemistry, Rensselaer Polytechnic Institute, 12180-3590, Troy, New York aut NATIONALLICENCE 700 1- Sha Yi-Gao Department of Chemistry, Rensselaer Polytechnic Institute, 12180-3590, Troy, New York aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 563-573 0361-5235 21:6<563 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer