caa a22 4500 469091215 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655435 doi (NATIONALLICENCE)springer-10.1007/BF02655435 Fabrication of n -native oxide/ p -ZnTe heterojunctions by the anodic oxidation of ZnTe MBE layers [Elektronische Daten] [A. Sher, R. Feldman, R. Austin, R. Opila, R. Masaitis, J. Zyskind, J. Sulhoff] We demonstrate diode-like behavior betweenp-type ZnTe and its anodic oxide. We describe conditions in which the anodic oxidation process is selective for ZnO formation.N-type conductivity of the anodic oxide is achieved through thermal annealing, giving rise to carrier concentrations of 5 × 1018 cm-3. The anodization and the thermal annealing parameters were correlated with Auger Electron Spectroscopy measurements. Structures of anodic oxide/ZnTe have exhibited good rectification properties after brief thermal annealing. TMS, 1992 ZnTe nationallicence anodic oxidation nationallicence p-n heterojunction nationallicence Sher A. AT&T Bell Laboratories, 07733, Holmdel, NJ aut Feldman R. AT&T Bell Laboratories, 07733, Holmdel, NJ aut Austin R. AT&T Bell Laboratories, 07733, Holmdel, NJ aut Opila R. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Masaitis R. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Zyskind J. AT&T Bell Laboratories, Crawford Hill Laboratory, 07733, Holmdel, NJ aut Sulhoff J. AT&T Bell Laboratories, Crawford Hill Laboratory, 07733, Holmdel, NJ aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 653-657 0361-5235 21:6<653 1992 21 11664 https://doi.org/10.1007/BF02655435 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655435 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sher A. AT&T Bell Laboratories, 07733, Holmdel, NJ aut NATIONALLICENCE 700 1- Feldman R. AT&T Bell Laboratories, 07733, Holmdel, NJ aut NATIONALLICENCE 700 1- Austin R. AT&T Bell Laboratories, 07733, Holmdel, NJ aut NATIONALLICENCE 700 1- Opila R. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Masaitis R. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Zyskind J. AT&T Bell Laboratories, Crawford Hill Laboratory, 07733, Holmdel, NJ aut NATIONALLICENCE 700 1- Sulhoff J. AT&T Bell Laboratories, Crawford Hill Laboratory, 07733, Holmdel, NJ aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 653-657 0361-5235 21:6<653 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer