caa a22 4500 469091223 CHVBK 20180323133017.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655428 doi (NATIONALLICENCE)springer-10.1007/BF02655428 Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts [Elektronische Daten] [S. Krishnankutty, R. Kolbas, M. Khan, J. Kuznia, J. Van Hove, D. Olson] The low temperature (77 K) photoluminescence characteristics of Al x Ga1-x N-GaN strained layer quantum wells with differentx values grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The photoluminescence spectra were useful in analyzing both quantum confinement effects and strain induced energy shifts. The strain induced shifts were found to be a strong function of aluminum compositionx. A model was developed to calculate the strain induced bandgap shifts atk = 0. The values predicted by this model which took into account the wurtzite crystal structure of the material system, were in good agreement with (i.e. within 2 meV of) the experimentally measured shifts. TMS, 1992 Photoluminescence nationallicence pseudomorphic nationallicence strain nationallicence quantum confinement nationallicence wurtzite crystal nationallicence Krishnankutty S. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut Kolbas R. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut Khan M. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Kuznia J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Van Hove J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Olson D. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 609-612 0361-5235 21:6<609 1992 21 11664 https://doi.org/10.1007/BF02655428 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655428 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Krishnankutty S. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Kolbas R. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Khan M. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Kuznia J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Van Hove J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Olson D. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 609-612 0361-5235 21:6<609 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer