caa a22 4500 469091231 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655421 doi (NATIONALLICENCE)springer-10.1007/BF02655421 Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si2H6 [Elektronische Daten] [S. Krishnan, S. Lian, B. Fowler, L. Jung, C. Li, S. Banerjee] Silicon homoepitaxial films have been grown by photodissociation of Si2H6 by the 193 nm line of an ArF excimer laser in an ultra-high vacuum system. Silicon epitaxy has been achieved in two ways: one, in which the laser shines into the chamber parallel to the substrate and another, in which the laser is directly incident on the substrate at grazing angles (87° with respect to the substrate normal). Controllable growth rates of 0.5-4Å/min have been achieved for crystalline films by the first method using substrate temperatures as low as 250° C, Si2H6 partial pressures of 20 mTorr and photon flux densities of 1016 photons/pulse.cm2. In the second method, where the laser beam is directly incident on the wafer at grazing angles, very high growth rates of up to 80Å/min have been achieved at 300° C, 20 mTorr Si2H6 partial pressure and a photon flux density of 2 × 1015 photons/pulse.cm2. A comparison of the microstructure of the films grown by the two methods is presented on the basis ofin situ reflection high energy electron diffraction (RHEED) analysis and selected area transmission electron microscopy (TEM) studies. In both cases, the growth rates are found to be linearly dependent on the photon flux density for the process parameter ranges studied. TMS, 1992 Low temperature Si epitaxy nationallicence excimer laser-induced Si2H6 photo-CVD nationallicence Si film microstructure nationallicence Krishnan S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Lian S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Fowler B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Jung L. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Li C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 559-562 0361-5235 21:6<559 1992 21 11664 https://doi.org/10.1007/BF02655421 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655421 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Krishnan S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Lian S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Fowler B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Jung L. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Li C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 559-562 0361-5235 21:6<559 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer