caa a22 4500 46909124X CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655424 doi (NATIONALLICENCE)springer-10.1007/BF02655424 Decomposition studies of tertiarybutyldimethylantimony [Elektronische Daten] [D. Cao, C. Chen, C. Hill, S. Li, G. Stringfellow, D. Gordon, D. Brown, B. Vaartstra] The vapor pressure, decomposition temperature, decomposition products, and decomposition reaction order are reported for a novel organometallic vapor-phase epitaxy (OMVPE) Sb precursor, tertiarybutyldimethylantimony (TBDMSb, C4H9(CH3)2Sb). The TBDMSb vapor pressure is 7.3 Torr at 23° C. The 50% decomposition temperature is 300° C for both He andD 2 ambients in a flow tube reactor with a residence time of approximately 3.2 sec at 300° C. The decomposition products are primarily C4H10, C4H8, and TMSb in both ambients. The overall decomposition reaction is first order. The decomposition mechanism is believed to be homolysis followed by recombination and disproportionation reactions for C4H9 and (CH3)2Sb groups. Added trimethylgallium (TMGa) has no measurable effect on either the pyrolysis rate or the products. Apparently, TMGa and TBDMSb do not interact during pyrolysis nor do they form a room temperature adduct. No room temperature adduct between TMGa and TBDMSb was formed. It is believed that TBDMSb is a promising Sb precursor for low temperature OMVPE growth. TMS, 1992 Tertiarybutyldimethylantimony nationallicence TBDMSb nationallicence pyrolysis nationallicence decomposition nationallicence OMVPE nationallicence Sb source nationallicence Cao D. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Chen C. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Hill C. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Li S. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Stringfellow G. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Gordon D. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut Brown D. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut Vaartstra B. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 583-588 0361-5235 21:6<583 1992 21 11664 https://doi.org/10.1007/BF02655424 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655424 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Cao D. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Chen C. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Hill C. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Li S. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Stringfellow G. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Gordon D. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut NATIONALLICENCE 700 1- Brown D. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut NATIONALLICENCE 700 1- Vaartstra B. Advanced Technology Materials, Inc., 7 Commerce Drive, 06810, Danbury, CT aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 583-588 0361-5235 21:6<583 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer