caa a22 4500 469091274 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655423 doi (NATIONALLICENCE)springer-10.1007/BF02655423 Temperature dependence of the electrical conduction in RuO2-based thick film resistors [Elektronische Daten] [Bi-Shiou Chiou, Jer-Yuan Sheu] In this paper, the temperature dependence of resistance of two generic RuO2-based resistors is investigated. The resistor compositions studied are 80 wt.% glass (63 wt.% PbO - 25 wt.% B2O3 - 12 wt.% SiO2, designated as G1) - 20 wt.% RuO2 and 80 wt.% glass (55.5 wt.% PbO - 22 wt.% B2O3 - 10.5 wt.% SiO2 - 12 wt.% Al2O3, designated as G2) - 20 wt.% RuO2. The sheet resistance of resistor 80 wt.% G1 - 20 wt.% RuO2 fired at 850° C decreases as the temperature is increased from 100 K to ∼400 K, remains a minimum value at temperatures 400 K ∼690 K, and then increases as the temperature is further raised. A negative temperature coefficient of resistance (TCR) of ∼-480 ppm/°C is obtained from 100 K to 500 K. TheTCR becomes less negative when temperature increases. Three models for conduction mechanism of thick film resistors are employed to explain the experimental results. A modified model, consisting of both tunneling and parallel conduction approaches, is proposed to elucidate the change in slope in the resistance-inverse temperature curve as well as the temperature dependence of the resistance. In addition, an equivalent circuit model is proposed to describe the electrical behavior of the thick film resistors. TMS, 1992 Thick film resistors nationallicence electrical conduction nationallicence TCR nationallicence Chiou Bi-Shiou Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30043, Taiwan, Republic of China aut Sheu Jer-Yuan Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30043, Taiwan, Republic of China aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 575-581 0361-5235 21:6<575 1992 21 11664 https://doi.org/10.1007/BF02655423 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655423 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chiou Bi-Shiou Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30043, Taiwan, Republic of China aut NATIONALLICENCE 700 1- Sheu Jer-Yuan Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 30043, Taiwan, Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 575-581 0361-5235 21:6<575 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer