caa a22 4500 469091290 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655426 doi (NATIONALLICENCE)springer-10.1007/BF02655426 Incorporation of boron into UHV/CVD-grown germanium-silicon epitaxial layers [Elektronische Daten] [D. Greve, Marco Racanelli] Doping of UHV/CVD-grown germanium-silicon epitaxial layers by diborane is reported. The boron concentration is linear in diborane flow rate and is consistent with a surface reaction mechanism in which two surface sites are required for adsorption. The sticking coefficient of diborane on a bare silicon or germanium-silicon surface is found to be about 1.2 × 10-2. Abrupt retrograde profiles can be grown successfully provided a pause is introduced before growing more lightly doped layers. TMS, 1992 Doping nationallicence germanium-silicon nationallicence epitaxy nationallicence Greve D. Department of Electrical and Computer Engineering, Carnegie Mellon University, 15213-3890, Pittsburgh, PA aut Racanelli Marco Department of Electrical and Computer Engineering, Carnegie Mellon University, 15213-3890, Pittsburgh, PA aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 593-597 0361-5235 21:6<593 1992 21 11664 https://doi.org/10.1007/BF02655426 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655426 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Greve D. Department of Electrical and Computer Engineering, Carnegie Mellon University, 15213-3890, Pittsburgh, PA aut NATIONALLICENCE 700 1- Racanelli Marco Department of Electrical and Computer Engineering, Carnegie Mellon University, 15213-3890, Pittsburgh, PA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 593-597 0361-5235 21:6<593 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer