caa a22 4500 469091304 CHVBK 20180323133018.0 cr unu---uuuuu 170328e19920601xx s 000 0 eng 10.1007/BF02655430 doi (NATIONALLICENCE)springer-10.1007/BF02655430 Temperature effects in GaAs OEMS spectra [Elektronische Daten] [M. Di Marco, J. Swanson] Wavelength modulated infra-red radiation has been used to modulate the components of electrical impedance of GaAs MIS and Schottky barrier device structures. The temperature dependence of the energy and magnitude of the spectral features has been studied with sub as well as super band-gap radiation; a sub band-gap feature which was seen in VPE above 250 K, but not at all in MBE material. It had an energy of 0.80 eV that was constant in the temperature range 250 to 300 K. This could have been due to an intra-centre transition within a defect or a transition to the conduction band. Insulator-GaAs interface states did not produce an observable OEMS response. One of the super band-gap features had an optical cross-section which increased monotonically with energy and appeared at 1.56 eV at 300 K. This value is in good agreement with the compositionally extrapolated DX centre energy in the AlGaAs alloy system for GaAs. Its energy with respect to theГ-VBM did not change between 200 and 300 K. Another similarly behaved feature was observed at 1.70 eV and has been tentatively assigned to phonon assisted transitions between theГ-VBM and the L-CBM. It is however surprising that its energy did not change with temperature. The constant energy separation between the states that have been assigned to the DX centre and the L-CBM suggests that they are related. TMS, 1992 GaAs nationallicence OEMS spectra nationallicence defects nationallicence Di Marco M. Department of Electrical and Electronic Engineering, King's College, Strand, WC2R 2LS, London, UK aut Swanson J. Department of Electrical and Electronic Engineering, King's College, Strand, WC2R 2LS, London, UK aut Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 619-628 0361-5235 21:6<619 1992 21 11664 https://doi.org/10.1007/BF02655430 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655430 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Di Marco M. Department of Electrical and Electronic Engineering, King's College, Strand, WC2R 2LS, London, UK aut NATIONALLICENCE 700 1- Swanson J. Department of Electrical and Electronic Engineering, King's College, Strand, WC2R 2LS, London, UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/6(1992-06-01), 619-628 0361-5235 21:6<619 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer